| PART |
Description |
Maker |
| AD820AN AD820AN-3V AD820AR AD820AR-3V AD820BN AD82 |
From old datasheet system
Single Supply, Rail to Rail Low Power FET-Input Op Amp
ECONOLINE: REC2.2-S_DR/H1 - 2.2W DIP Package- 1kVDC Isolation- Regulated Output- UL94V-0 Package Material- Continuous Short Circiut Protection
Single Supply/ Rail to Rail Low Power FET-Input Op Amp
Circular Connector Cable Assembly; Connector Type A:Circular Receptacle; Connector Type B:Stripped End Leads; Cable Length:10ft RoHS Compliant: Yes
|
http://
AD[Analog Devices]
Analog Devices, Inc.
|
| 2SK2642-01MR |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
N-CHANNEL SILICON POWER MOS-FET
|
FUJI[Fuji Electric]
|
| 2SK168 2SK168E 2SK168D 2SK168F |
Silicon N Channel MOS FET
Silicon N-Channel Junction FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR|JFET|N-CHANNEL|8MA I(DSS)|TO-92
TRANSISTOR|JFET|N-CHANNEL|20MA I(DSS)|TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 12mA的我（直）|2
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| 2SJ324 2SJ324-Z-T1 2SJ324-Z-E2 2SJ324-Z-T2 2SJ324- |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
|
| AD82206 AD822AR-REEL AD822BR-REEL AD822BR-REEL7 AD |
Single-Supply, Rail-to-Rail Low Power FET-Input Op Amp
|
Analog Devices
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| NID5003NT4 NID5003N |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK
Self-Protected FET with Temperature and Current Limit(带温度和电流限制的自保护FET)
42 V, 20 A, Single N−Channel, DPAK 20 A, 42 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET
Self-Protected FET with Temperature and Current Limit(甯?俯搴???垫???????淇??FET)
|
ONSEMI[ON Semiconductor]
|
| MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTSF1P02HD ON2655 |
SINGLE TMOS POWER MOSFET
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET 金属门射频硅场效应管
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
| 5962-9458507HMA 5962-9458507HMC 5962-9458506H9A 59 |
Low-Cost, Micropower, High-Side Current-Sense Amplifier Comparator Reference ICs
EEPROM EEPROM
Single/Dual/Quad, Low-Cost, UCSP/SOT23, Low-Power, Rail-to-Rail I/O Op Amps EEPROM
High-Speed, Low-Power, Single-Supply Multichannel, Video Multiplexer-Amplifiers EEPROM
Low-Cost, 3V/ 5V, 620µA, 200MHz, Single-Supply Op Amps with Rail-to-Rail Outputs EEPROM
|
Silicon Storage Technology, Inc.
Glenair, Inc.
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
